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2SC3419(1997) Даташит - Toshiba

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2SC3419

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

• Low Saturation Voltage
   : VCE (sat) = 0.25 V (Typ.) (IC = 500 mA, IB = 50 mA)
• High Collector Power Dissipation: PC = 1.2 W (Ta = 25°C)
• Complementary to 2SA1356


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