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2SC3355 Даташит - NEC => Renesas Technology

2SC3355 image

Номер в каталоге
2SC3355

Other PDF
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page
8 Pages

File Size
83.4 kB

производитель
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
   NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
   MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


Номер в каталоге
Компоненты Описание
PDF
производитель
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Inchange Semiconductor
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Renesas Electronics

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