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2SC2655 Даташит - Toshiba

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2SC2655

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  1998   2009  

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5 Pages

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Toshiba
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Power Amplifier Applications
Power Switching Applications
​​​​​​​
•  Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A)
•  High collector power dissipation: PC= 900 mW
•  High-speed switching: tstg= 1.0 μs (typ.)
•  Complementary to 2SA1020.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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