PNP/NPN Epitaxial Planar Silicon Tranasistors

FEATUREs
 • Low-saturation collector-to-emitter voltage :
    VCE(sat)=–0.5V(PNP), 0.4V(NPN) max.
 • Wide ASO leading to high resistance to breakdown.

APPLICATIONs
 • Relay drivers, high-speed inverters, converters, and
   other general high-current switching applications.