datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  New Jersey Semiconductor  >>> 2SB556 PDF

2SB556 Даташит - New Jersey Semiconductor

2SB556 image

Номер в каталоге
2SB556

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
2 Pages

File Size
85.5 kB

производитель
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   :V(BR)CEO=-120V(Min)
• High Power Dissipation-
   : Pc= 100W(Max)@Tc=25°C
• Complement to Type 2SD426


APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 80W high-fidelity audio frequency
   amplifier output stage.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon PNP Power Transistors
SavantIC Semiconductor
Silicon PNP Power Transistors
Inchange Semiconductor
Silicon PNP Power Transistors
New Jersey Semiconductor
Silicon PNP Power Transistors
Inchange Semiconductor
Silicon PNP Power Transistors
New Jersey Semiconductor
Silicon PNP Power Transistors
New Jersey Semiconductor
Silicon PNP Power Transistors
Inchange Semiconductor
Silicon PNP Power Transistors
Inchange Semiconductor
Silicon PNP Power Transistors
New Jersey Semiconductor
Silicon PNP Power Transistors
New Jersey Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]