2SB1587 Даташит - New Jersey Semiconductor
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2SB1587
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min)
• High DC Current Gain- : hFE= 5000( Min.) @(IC= -6A, VCE=- 4V)
• Low Collector Saturation Voltage- : VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA)
• Complement to Type 2SD2438
APPLICATIONS
• Designed for audio, series regulator and general purpose applications.
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