2SB1133 Даташит - New Jersey Semiconductor
Номер в каталоге
2SB1133
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2 Pages
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104.2 kB
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -60V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD1666
APPLICATIONS
• Designed for low frequency and general purpose
amplifier applications.
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