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2N7002KDW Даташит - Yangzhou yangjie electronic co., Ltd

2N7002KDW image

Номер в каталоге
2N7002KDW

Компоненты Описание

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6 Pages

File Size
594.9 kB

производитель
YANGJIE
Yangzhou yangjie electronic co., Ltd YANGJIE

Product Summary
● VDS 60V
● ID 0.34A
● RDS(ON)( at VGS=10V) <2.5 ohm
● RDS(ON)( at VGS=4.5V) <3.0 ohm
● ESD Protected Up to 2.5KV (HBM)

General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage


APPLICATIONs
● Battery operated systems
● Solid-state relays

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Номер в каталоге
Компоненты Описание
PDF
производитель
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics

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