General Description
This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches.

FEATUREs
■ RDS(on) (Max 7.5Ω )@VGS=10V
   RDS(on) (Max 7.5Ω )@VGS=4.5V
■ Gate Charge (Typical 0.5nC)
■ Maximum Junction Temperature Range (150°C)