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2N6766(V2) Даташит - IXYS CORPORATION

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Номер в каталоге
2N6766

Other PDF
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page
1 Pages

File Size
45.9 kB

производитель
IXYS
IXYS CORPORATION IXYS

Standard Power MOSFET

N-Channel Enhancement Mode


FEATUREs
• International standard package
   JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times


APPLICATIONs
• Switch-mode and resonant-mode
   power supplies
• Motor controld
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw
   (isolated mounting screw hole)
• Space savings
• High power density


Номер в каталоге
Компоненты Описание
PDF
производитель
High ruggedness / N-Channel MOSFET
Unspecified
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
Semelab - > TT Electronics plc
N-Channel Enhancement-Mode MOSFET Die
General Semiconductor
N-Channel MOSFET Die Enhancement-Mode
Central Semiconductor
High Voltage Power MOSFET Die
IXYS CORPORATION
High Voltage Power MOSFET Die
IXYS CORPORATION
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc

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