datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Shenzhen SPTECH Microelectronics Co., Ltd.  >>> 2N6667 PDF

2N6667 Даташит - Shenzhen SPTECH Microelectronics Co., Ltd.

2N6667 image

Номер в каталоге
2N6667

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
2 Pages

File Size
180.5 kB

производитель
SPTECH
Shenzhen SPTECH Microelectronics Co., Ltd. SPTECH

DESCRIPTION
• High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A
• Complement to Type 2N6387


APPLICATIONS
• Designed for general purpose amplifier and low speed switching applications.

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]