Plastic Medium-Power Silicon Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications.

FEATUREs
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
   VCEO(sus) = 60 Vdc (Min) − 2N6387
                      = 80 Vdc (Min) − 2N6388
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 2.0 Vdc (Max) @ IC
                   = 5.0 Adc − 2N6387, 2N6388
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• TO−220AB Compact Package
• These Devices are Pb−Free and are RoHS Compliant*