2N6388 Даташит - ON Semiconductor
Номер в каталоге
2N6388
Компоненты Описание
PDF
page
6 Pages
File Size
85.1 kB
производитель
ON Semiconductor
Plastic Medium-Power Silicon Transistors
These devices are designed for general-purpose amplifier and low-speed switching applications.
FEATUREs
• High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage - @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) - 2N6387
= 80 Vdc (Min) - 2N6388
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc - 2N6387, 2N6388
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• TO-220AB Compact Package
• Pb-Free Packages are Available*
Номер в каталоге
Компоненты Описание
PDF
производитель
NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
Motorola => Freescale
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 150 WATTS
Motorola => Freescale
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 150 WATTS
New Jersey Semiconductor
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 90 WATTS
Motorola => Freescale
Share Link: