Darlington Complementary Silicon Power Transistors

. . . designed for general−purpose amplifier and low frequency switching applications.

• High DC Current Gain —
   hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA
   VCEO(sus) = 80 Vdc (Min) — 2N6058
                         100 Vdc (Min) — 2N6052, 2N6059
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative.