Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications.

FEATUREs
• Low Collector−Emitter Saturation Voltage −
   VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
• Low Leakage Current
   ICEX = 1.0 mAdc (max) at Rated Voltage
• Excellent DC Current Gain −
   hFE = 20 (min) at IC = 10 Adc
• High Current Gain Bandwidth Product −
   f = 4.0 MHz (min) at IC = 1.0 Adc
• Pb−Free Packages are Available*