2N5610 Даташит - New Jersey Semiconductor
Номер в каталоге
2N5610
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New Jersey Semiconductor
DESCRIPTION
• DC Current Gain- : hFE= 70-200@IC= 2.5A
• Wide Area of Safe Operation
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min)
• Complement to Type 2N5609
APPLICATIONS
• Designed for use in high frequency power amplifiers, audio power amplifier and drivers.
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