High-Power NPN Silicon Transistors

. . . for use in power amplifier and switching circuits applications.

• High Collector–Emitter Sustaining Voltage —
    VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)
• Low Collector–Emitter Saturation Voltage —
    VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)
    1.0 Vdc (Max) @ IC = 10 Adc (2N5303)
• Excellent Safe Operating Area —
    200 Watt dc Power Rating to 30 Vdc (2N5303)
• Complements to PNP 2N4398, 2N4399 and 2N5745