COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

..designed for general-purpose power amplifier and switching applications.

FEATURES:
* Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A
* Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A
* LowLeakage Current- lcex =0.1 mA(Max)