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2N3583 Даташит - Microsemi Corporation

2N3583 image

Номер в каталоге
2N3583

Компоненты Описание

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3 Pages

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48.4 kB

производитель
Microsemi
Microsemi Corporation Microsemi

DESCRIPTION:
These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.


FEATURES:
• High Voltage: 250 to 500V 
• High Current: 2 Amps
• Fast Switching: tf < 3msec. 
• Low VCE (SAT)
• High Power: 35 Watts


APPLICATIONS:
• Off-Line Inverters 
• Deflection Circuits
• Switching Regulators 
• DC-DC Converters
• Motor Controls 
• High Voltage Amplifiers


Номер в каталоге
Компоненты Описание
PDF
производитель
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