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2N3232 Даташит - New Jersey Semiconductor

2N3232 image

Номер в каталоге
2N3232

Компоненты Описание

Other PDF
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page
2 Pages

File Size
81.5 kB

производитель
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 18-55@ IC= 3A
• Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 3A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min)


APPLICATIONS
• Designed for general purpose power switch and amplifier applications.

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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