General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild’s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

FEATUREs
● 7.1 A, 20 V.
   RDS(ON) = 20 mW @ VGS = 4.5 V
   RDS(ON) = 26 mW @ VGS = 2.5 V
● Extended VGSS range (±12V) for battery applications
● ESD protection diode (note 3)
● High performance trench technology for extremely low RDS(ON)
● Low profile TSSOP-8 package

APPLICATIONs
   Li-Ion Battery Pack