600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.
These IGBT’s are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49341.

FEATUREs
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . .55ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model
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