20J321 Даташит - Toshiba
Номер в каталоге
20J321
Компоненты Описание
Other PDF
no available.
PDF
page
7 Pages
File Size
187.6 kB
производитель
Toshiba
High Power Switching Applications
Fast Switching Applications
• Fourth-generation IGBT
• Enhancement mode type
• Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.04 μs (typ.)
Low switching loss : Eon = 0.40 mJ (typ.)
: Eoff = 0.43 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
• FRD included between emitter and collector
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
Share Link: