производитель
![NELLSEMI](/logo/NELLSEMI.png)
Nell Semiconductor Co., Ltd
![NELLSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
The Nell 1N60 is a three-terminal silicon device with current conduction capability of 1.2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
FEATURES
● RDS(ON) = 11.5Ω@VGS = 10V
● Ultra low gate charge(6nC max.)
● Low reverse transfer capacitance (CRSS = 3pF typical)
● Fast switching capability
● 100% avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature
Номер в каталоге
Компоненты Описание
PDF
производитель
N-Channel Power MOSFET (8A, 600Volts)
Nell Semiconductor Co., Ltd
N-Channel Power MOSFET 13A, 600Volts
Nell Semiconductor Co., Ltd
N-Channel Power MOSFET (10A, 600Volts)
Nell Semiconductor Co., Ltd
1.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies
1.2A, 650V N-CHANNEL POWER MOSFET
Unisonic Technologies
1.2A, 600V N-CHANNEL POWER MOSFET
Unisonic Technologies
N-Channel Power MOSFET (3A, 600Volts)
Nell Semiconductor Co., Ltd
N-Channel Power MOSFET (2A, 600Volts)
Nell Semiconductor Co., Ltd
N-CHANNEL POWER MOSFET(3A, 600Volts)
Unspecified
1.2A, 700V N-CHANNEL POWER MOSFET
Unisonic Technologies