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1N4154 Даташит - New Jersey Semiconductor

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1N4154

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ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES

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New Jersey Semiconductor

NJSEMI

ULTRA HIGH SPEED SILICON PLANAR EPITAXIAL DIODES

• C ... 4pF @ VR = 0, f = 1.0 MHz
• trr ... 2.0 ns @ IF = 10 mA, VR = -6.0 V, RL = 100 Ω

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Silicon Epitaxial Planar Ultra-High Speed Switching Diodes

ROHM Semiconductor

Silicon Epitaxial Planar High-Speed Switching Diodes

ROHM Semiconductor

SILICON PLANAR HIGH SPEED DIODES

Continental Device India Limited

Ultra High Speed Diodes

Fairchild Semiconductor

200 mW EPITAXIAL PLANAR HIGH-SPEED DIODES

First Components International

SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

Continental Device India Limited

SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

Transys Electronics Limited

SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

Transys Electronics Limited

SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

Continental Device India Limited

SILICON PLANAR EPITAXIAL HIGH SPEED DIODE

Continental Device India Limited

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