1N3062_ Даташит - New Jersey Semiconductor
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1N3062_
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New Jersey Semiconductor
ULTRA FAST LOW CAPACITANCE DIFFUSED SILICON PLANAR* DIODES
• C ... 2.0 pF @ VR = 0, f = 1.0 MHz
• trr ... 4.0 ns @ If = 10 mA, Rr = 10 mA, Vr = 1.0 V
• BV ... 75 V (MIN)
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HIGH CONDUCTANCE ULTRA FAST SWITCHES DIFFUSED SILICON PLANAR DIODES
New Jersey Semiconductor
ULTRA LOW CAPACITANCE ESD PROTECTION DIODES ARRAY
Shanghai Leiditech Electronic Technology Co., Ltd
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