производитель
Intersil
These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to
source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
FEATUREs
• 0.30A, 60V
•rDS(ON)= 6.0Ω
• Built in Current Limit ILIMIT 0.140 to 0.210A at 150oC
• Built in Voltage Clamp
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
Номер в каталоге
Компоненты Описание
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производитель
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15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs
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Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET
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2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET
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30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
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8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
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4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
