STB22NM60 Просмотр технического описания (PDF) - STMicroelectronics
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STB22NM60
STMicroelectronics
STB22NM60 Datasheet PDF : 11 Pages
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STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ELECTRICAL CHARACTERISTICS (CONTINUE)
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 11 A
TBD
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1590
pF
Coss
Output Capacitance
803
pF
Crss
Reverse Transfer
52
pF
Capacitance
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
130
pF
Rg
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 200 V, ID = 11 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 400 V, ID = 22 A,
VGS = 10 V
Min.
Typ.
25
20
Max.
Unit
ns
ns
40
71
nC
11
nC
25
nC
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 480 V, ID = 22 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
Min.
Typ.
13
15
26
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 22 A, VGS = 0
trr
Reverse Recovery Time
ISD = 22 A, di/dt = 100 A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 25°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
trr
Reverse Recovery Time
ISD = 22 A, di/dt = 100 A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 150°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
416
5.6
27
544
7.3
28
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
3/11
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