STB22NM60 Просмотр технического описания (PDF) - STMicroelectronics
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STB22NM60
STMicroelectronics
STB22NM60 Datasheet PDF : 11 Pages
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STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area;
(1) ISD ≤22A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Value
Unit
STP22NM60
STB22NM60/1
STF22NM60
STW22NM60
600
V
600
V
±30
V
22
22 (*)
22
A
12.6
12.6 (*)
12.6
A
80
80(*)
80
A
192
45
210
W
1.2
0.36
1.2
W/°C
15
V/ns
--
2500
--
V
–65 to 150
°C
150
°C
(*)Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl
Maximum Lead Temperature For Soldering
Purpose
TO-220/D2PAK/I2PAK/TO-247
0.65
62.5
300
TO-220FP
2.8
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
11
A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
650
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
Breakdown Voltage
IDSS Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30 V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
5
RDS(on) Static Drain-source On
Resistance
VGS = 10 V, ID = 11 A
0.19
0.25
Unit
V
µA
µA
nA
V
Ω
2/11
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