STD6NF10 Просмотр технического описания (PDF) - STMicroelectronics

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STD6NF10

N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET

STMicroelectronics 

STD6NF10, STU6NF10

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 6 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 6 A, di/dt = 100 A/µs,

Reverse recovery charge VDD = 10 V, Tj = 150 °C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Typ.

70

175

5

Max. Unit

6

A

24

A

1.3 V

ns

nC

A

5/14

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