STD6NF10 Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге

Компоненты Описание

Список матч

STD6NF10

N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STD6NF10, STU6NF10

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

Zero gate voltage

drain current (VGS = 0)

IGSS

VGS(th)

RDS(on)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min.

ID = 250 µA, VGS =0

100

VDS = max rating

VDS =max rating,

TC = 125 °C

VGS = ± 20 V

VDS = VGS, ID = 250 µA

2

VGS = 10 V, ID = 3 A

Typ. Max. Unit

V

1

µA

10

µA

±100 nA

4

V

0.22 0.25

Ω

Table 5.

Symbol

Dynamic

Parameter

Test conditions

Min.

gfs (1)

Ciss

Coss

Crss

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = > ID(on) x

RDS(on)max, ID = 3A

VDS = 25 V, f = 1 MHz,

VGS = 0

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50 V, ID = 3 A

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 80 V, ID = 6 A,

VGS = 10 V, RG = 4.7 Ω

(see Figure 14)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Typ.

34

280

45

20

6

10

20

3

10

2.5

4

Max.

14

Unit

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

4/14

Share Link: