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A8437

Mobile Phone Xenon Photoflash Capacitor Charger with IGBT Driver

Allegro MicroSystems 

A8437

Mobile Phone Xenon Photoflash Capacitor Charger

with IGBT Driver

ELECTRICAL CHARACTERISTICS typical values valid at VIN = 3.6 V, RSET = 33 kΩ, ISWlim = 1.0 A, and TA=25°C, unless otherwise noted

Characteristics

Symbol

Test Conditions

Min. Typ. Max.

VIN Voltage Range

UVLO Enable Threshold

UVLO Hysteresis

VIN

VINUV

VINUVhys

VIN rising

Shutdown (CHARGE = 0 V,

TRIGGER1 and TRIGGER2 = 0 V)

2.3

–

5.5

–

2.05

2.2

–

150

–

–

0.01

0.5

VIN Supply Current

Charging complete, regulation disabled (REG = VIN)

–

10

50

IIN

Charging complete, regulation enabled

–

0.5

–

Charging (CHARGE = VIN,

TRIGGER1 and TRIGGER2 = 0 V)

–

2

–

Current Limits

Switch Current Limit1

SW / ISET Current Ratio

ISET Pin Voltage While Charging

ISET Pin Internal Resistance

Switch On-Resistance

Switch Leakage Current2

CHARGE Input Current

CHARGE Input Voltage2

ISWlimMAX

ISWlimMIN

ISW/ISET

VSET

RSET(INT)

RSWDS(on)

ISWlk

ICHARGE

VCHARGE

Maximum, RSET = 26.7 kΩ

Minimum, RSET = 85 kΩ

RSET = 33 kΩ, CHARGE = high

RSET = 33 kΩ, CHARGE = high

VIN = 3.6 V, ID = 800 mA, TA = 25°C

VSW = VIN(max), over temperature range

Combined VIN and SW leakage current at TA=25°C

VIN= 5.5 V in Shutdown

VCHARGE = VIN

High, over input supply range

Low, over input supply range

1.08

1.2

1.32

–

0.4

–

–

28

–

–

1.2

–

–

1000

–

–

0.25

–

–

–

2

–

–

0.5

–

36

–

1.1

–

–

–

–

0.4

CHARGE Pull-Down Resistor Value

CHARGE ON/OFF Delay

Maximum Switch-Off Timeout

Maximum Switch-On Timeout

¯D¯¯O¯¯N¯¯E¯ Output Leakage Current2

RCHPD

tCH

toffMAX

tonMAX

IDONElk

–

100

–

–

20

–

–

18

–

–

18

–

–

–

1

¯D¯¯O¯¯N¯¯E¯ Output Low Voltage2

Output Comparator Trip Voltage2

Output Comparator Overdrive

Minimum dV/dt for ZVS Comparator

VDONEL

VOUTTRIP

VOUTOV

dV/dt

32 μA into ¯D¯¯O¯¯N¯¯E¯ pin

Measured as VSW – VIN

Pulse width = 200 ns (90% to 90%)

Measured at SW pin

–

–

100

31

31.5

32

–

200

400

–

20

–

Regulation

REG Voltage When Charging Completes

VREG(H) CHARGE = high, at ¯D¯¯O¯¯N¯¯E¯ → low transition

1.15

1.2

1.25

REG Voltage Threshold for Regulation

VREG(L) CHARGE = high, at ¯D¯¯O¯¯N¯¯E¯= low

–

0.96

–

REG Output Current Drive Capability

IREG

CHARGE = high, at ¯D¯¯O¯¯N¯¯E¯= high, VSW – VIN = 30 V,

VREG = 1.0 V

–

50

–

REG Leakage Current While Not Charging IREGlk CHARGE = high, at ¯D¯¯O¯¯N¯¯E¯= low, VREG = 1.2 V

–

0.1

–

IGBT Driver

TRIGGER, TRIGGER2 Input Voltage2

VTRIG(H) Input = logic high, over input supply range

VTRIG(L) Input = logic low, over input supply range

1.1

–

–

–

–

0.4

TRIGGER, TRIGGER2 Pull-Down Resistor RTRIGPD

–

100

–

GSOURCE Resistance to VIN3

RSrcDS(on) VIN = 3.6 V, VGSOURCE =1.8 V

–

5

–

GSINK Resistance to GND3

RSnkDS(on) VIN = 3.6 V, VGSINK = 1.8 V

–

6

–

Propagation Delay (Rising)

tDr

–

30

–

Propagation Delay (Falling)

tDf

GSOURCE and GSINK tied together, measurement

–

30

–

Output Rise Time

tr

taken at pin; RGATE = 12 Ω, CL= 6500 pF, VIN = 3.6 V

–

70

–

Output Fall Time

tf

–

70

–

1Current limit guaranteed by design and correlation to static test. Refer to application section for peak current in actual circuits.

2Specifications over the range TA= –40°C to 85°C; guaranteed by design and characterization.

3GSOURCE and GSINK tied together (GATE pin) in EJ package.

Unit

V

V

mV

μA

μA

mA

mA

A

A

kA/A

V

Ω

Ω

μA

μA

μA

V

V

kΩ

us

μs

μs

μA

mV

V

mV

V/μs

V

V

μA

μA

V

V

kΩ

Ω

Ω

ns

ns

ns

ns

Allegro MicroSystems, Inc.

5

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

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