C3503 Просмотр технического описания (PDF) - Inchange Semiconductor

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C3503

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC3503

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-Base breakdown voltage

IC=1mA ; IB=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC=20mA; IB= 2mA

VBE(sat) Base-Emitter Saturation Voltage

IC=20mA; IB= 2mA

ICBO

Collector Cutoff Current

VCB= 300V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 10mA ; VCE= 10V

MIN TYP. MAX UNIT

300

V

300

V

5

V

0.6

V

1.0

V

1.0 μA

1.0 μA

40

320

 hFE Classifications

C

D

40-80

60-120

E

100-200

F

160-320

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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