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C3503

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SC3503

DESCRIPTION

·Low Collector Saturation Voltage

·High breakdown voltage

·Silicon NPN epitaxial planar transistor

·Small reverse transfer capacitance and excellent high

frequency characteristic

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·For high definition CRT display ,video output

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

300

V

VCEO Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ Tc=25℃

TJ

Junction Temperature

0.1

A

7

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

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