BR25G128FVM-3GTR Просмотр технического описания (PDF) - ROHM Semiconductor
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BR25G128FVM-3GTR Datasheet PDF : 36 Pages
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BR25G128-3
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Ratings
Unit
Remarks
Supply Voltage
VCC
-0.3 to +6.5
V
0.45 (SOP8)
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
0.45 (SOP-J8)
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
Power Dissipation.
Pd
0.33 (TSSOP-B8)
W When using at Ta=25°C or higher 3.3mW to be reduced per 1°C.
0.31 (MSOP8)
When using at Ta=25°C or higher 3.1mW to be reduced per 1°C.
0.30 (VSON008X2030)
When using at Ta=25°C or higher 3.0mW to be reduced per 1°C.
Storage Temperature
Tstg
- 65 to +150
°C
Operating Temperature
Topr
- 40 to +85
°C
Input Voltage /
Output Voltage
The Max value of Input Voltage/Output Voltage is not over 6.5V.
‐
- 0.3 to Vcc+1.0
V When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not under -1.0V.
Junction Temperature
Tjmax
150
°C Junction temperature at the storage condition
Electrostatic discharge
voltage
(human body model)
VESD
-4000 to +4000
V
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V)
Parameter
Write Cycles (Note1)
Data Retention (Note1)
Limits
Min
Typ Max
1,000,000
-
-
100
-
-
(Note1) Not 100% TESTED
Unit
Times
Years
Recommended Operating Ratings
Parameter
Symbol
Ratings
Unit
Power Source Voltage
Vcc
Input Voltage
VIN
1.6 to 5.5
0 to Vcc
V
Input / Output Capacity (Ta=25°C, frequency=5MHz)
Parameter
Input Capacity (Note1)
Output Capacity (Note1)
Symbol
Min
CIN
－
COUT
－
Max
8
8
(Note1) Not 100% TESTED.
Unit
Conditions
pF VIN=GND
VOUT=GND
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TSZ02201-0R2R0G100670-1-2
19.Mar.2014 Rev.001
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