TJ20A10M3 Просмотр технического описания (PDF) - Toshiba
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TJ20A10M3 Datasheet PDF : 6 Pages
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TJ20A10M3
10
1 Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10µ
100µ
rth – tw
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.57°C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
−100
ID max (pulse) *
1 ms *
100 µs *
−10
−1
* Single pulse Tc=25℃
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1
−1
−10
VDSS max
−100
−1000
Drain-source voltage VDS (V)
EAS – Tch
200
L = 500 µH
VDD = −25 V
IAR = −20 A
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
0V
−15 V
BVDSS
IAS
VDD
VDS
Test circuit
RG = 25 Ω
VDD = −25 V, L = 500 µH
Waveform
EΕAS
=
1
2
⋅
L
⋅I2
⋅
BVDSS
BVDSS − VDD
5
2018-06-01
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