TK3R2E06PL Просмотр технического описания (PDF) - Toshiba

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TK3R2E06PL

MOSFETs Silicon N-channel MOS (U-MOSIX-H)

Toshiba 

TK3R2E06PL

Fig. 8.13 rth - tw

(Guaranteed Maximum)

Fig. 8.14 PD - Tc

(Guaranteed Maximum)

Fig. 8.15 Safe Operating Area

(Guaranteed Maximum)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

©2017

Toshiba Electronic Devices & Storage Corporation

7

2017-07-06

Rev.1.0

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