TK3R2E06PL Просмотр технического описания (PDF) - Toshiba
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TK3R2E06PL Datasheet PDF : 9 Pages
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TK3R2E06PL
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Single-pulse avalanche current
Channel temperature
Storage temperature
Mounting torque
(Tc = 25 )
(Silicon limit)
(t = 100 µs)
(Tc = 25 )
(Note 1)
(Note 1), (Note 2)
(Note 1)
(Note 3)
(Note 3)
VDSS
VGSS
ID
ID
IDP
PD
EAS
IAS
Tch
Tstg
TOR
60
±20
100
160
400
168
61
100
175
-55 to 175
0.6
V
A
W
mJ
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 )
Channel-to-ambient thermal resistance
(Ta = 25 )
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: Limited 100 A by package capability.
Note 3: VDD = 48 V, Tch = 25 (initial), L = 4.7 µH, IAS = 100 A
Symbol
Rth(ch-c)
Rth(ch-a)
Max
Unit
0.89
/W
83.3
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2017
Toshiba Electronic Devices & Storage Corporation
2
2017-07-06
Rev.1.0
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