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STFU15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package

STMicroelectronics 

Electrical characteristics

STFU15NM65N

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source

on-resistance

VDS = 650 V

VDS = 650 V, TC = 125 °C

VGS = ± 25 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 6 A

Min. Typ. Max. Unit

650

V

1 µA

100 µA

±100 µA

2

3

4

V

0.35 0.38 Ω

Symbol

Ciss

Coss

Crss

Coss eq.(1)

RG

Qg

Qgs

Qgd

Parameter

Input capacitance

Output capacitance

Reverse transfer

capacitance

Equivalent output

capacitance

Intrinsic gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Table 6: Dynamic

Test conditions

VDS = 50 V, f = 1 MHz,

VGS = 0 V

Min. Typ. Max. Unit

- 983 -

-

57

-

pF

- 4.5 -

VDS = 0 to 520 V, VGS = 0 V - 146 -

pF

f = 1 MHz open drain

VDD = 520 V, ID = 12 A,

VGS = 10 V

- 4.9 -

Ω

- 33.3 -

nC

- 5.7 -

-

17

-

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Symbol

td(on)

tr

td(off)

tf

Parameter

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Table 7: Switching times

Test conditions

VDD = 325 V, ID = 6 A,

RG = 4.7 Ω, VGS = 10 V

Min. Typ. Max. Unit

- 55.5 -

- 8.5

-

ns

-

14

-

- 11.4 -

4/12

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