STFU15NM65N Просмотр технического описания (PDF) - STMicroelectronics

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STFU15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFET in a TO-220FP ultra narrow leads package

STMicroelectronics 

STFU15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II

Power MOSFET in a TO-220FP ultra narrow leads package

Datasheet - production data

3

2

1

TO-220FP

ultra narrow leads

Figure 1: Internal schematic diagram

Features

Order code

STFU15NM65N

VDS

650 V

RDS(on) max

0.38 Ω

ID

12 A

 100% avalanche tested

 Low input capacitance and gate charge

 Low gate input resistance

Applications

 Switching applications

Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

Order code

STFU15NM65N

Table 1: Device summary

Marking

Package

15NM65N

TO-220FP ultra narrow leads

Packaging

Tube

September 2015

DocID027631 Rev 2

This is information on a product in full production.

1/12

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