CY7C109B-20VI(2005) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C109B-20VI Datasheet PDF : 11 Pages
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CY7C109B
CY7C1009B
Switching Characteristics[5] Over the Operating Range (continued)
7C109B-20
7C1009B-20
7C109B-25
7C1009B-25
7C109B-35
7C1009B-35
Parameter
Description
Min. Max. Min. Max. Min. Min. Unit
Read Cycle
tRC
Read Cycle Time
20
25
35
ns
tAA
Address to Data Valid
20
25
35
ns
tOHA
Data Hold from Address Change
3
5
5
ns
tACE
CE1 LOW to Data Valid, CE2 HIGH to Data
Valid
20
25
35
ns
tDOE
OE LOW to Data Valid
8
10
15
ns
tLZOE
OE LOW to Low Z
0
0
0
ns
tHZOE
OE HIGH to High Z[6, 7]
8
10
15
ns
tLZCE
CE1 LOW to Low Z, CE2 HIGH to Low Z[7]
3
5
5
ns
tHZCE
CE1 HIGH to High Z, CE2 LOW to High Z[6, 7]
8
10
15
ns
tPU
CE1 LOW to Power-Up, CE2 HIGH to
0
0
0
ns
Power-Up
tPD
CE1 HIGH to Power-Down, CE2 LOW to
Power-Down
20
25
35
ns
Write Cycle[8]
tWC
Write Cycle Time[9]
20
25
35
ns
tSCE
CE1 LOW to Write End, CE2 HIGH to Write End 15
20
25
ns
tAW
Address Set-Up to Write End
15
20
25
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
12
15
20
ns
tSD
Data Set-Up to Write End
10
15
20
ns
tHD
tLZWE
tHZWE
Data Hold from Write End
WE HIGH to Low Z[7]
WE LOW to High Z[6, 7]
0
0
0
ns
3
5
5
ns
8
10
15
ns
Data Retention Characteristics Over the Operating Range (Low Power version only)
Parameter
Description
VDR
ICCDR
tCDR
tR
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE1 > VCC – 0.3V or CE2 < 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Data Retention Waveform
Min. Max Unit
2.0
V
150 μA
0
ns
200
μs
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
4.5V
tCDR
tR
CE
Document #: 38-05038 Rev. *B
Page 5 of 11
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