STTH2003 Просмотр технического описания (PDF) - STMicroelectronics
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STTH2003 Datasheet PDF : 8 Pages
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STTH2003CT/CG/CF/CR/CFP
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
S factor
0.60
0.50
VR=200V
Tj=125°C
0.40
0.30
0.20
0.10
0.00
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode) (TO-220AB).
VFP(V)
10
IF=IF(av)
8 Tj=125°C
6
4
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
S factor
IRM
Tj(°C)
50
75
100
125
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
tfr(ns)
500
400
300
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
200
100
0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
(D2PAK).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
S(Cu) (cm²)
0
0 5 10 15 20 25 30 35 40
4/8
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