STTH2003 Просмотр технического описания (PDF) - STMicroelectronics
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STTH2003 Datasheet PDF : 8 Pages
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Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
14
12
10
8
6
4
2
0
0
2
δ = 0.05 δ = 0.1 δ = 0.2
IF(av) (A)
4
6
δ = 0.5
δ=1
T
δ=tp/T
tp
8
10
12
STTH2003CT/CG/CF/CR/CFP
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
200
100
Tj=125°C
Tj=25°C
10
Tj=75°C
VFM(V)
1
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
/ D2PAK / I2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
0.2
δ = 0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
T
1E-1
δ=tp/T
tp
1E+0
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
IRM(A)
16
14 VR=200V
Tj=125°C
12
IF=2*IF(av)
IF=IF(av)
10
8
IF=0.5*IF(av)
6
4
2
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
trr(ns)
100
80
60
40
IF=IF(av)
IF=2*IF(av)
VR=200V
Tj=125°C
20
IF=0.5*IF(av)
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
3/8
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