ST3DV520E Просмотр технического описания (PDF) - STMicroelectronics
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ST3DV520E Datasheet PDF : 19 Pages
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Electrical characteristics
3
Electrical characteristics
ST3DV520E
Table 7. DC electrical characteristics
Value
Symbol
Parameter
Test condition
-40 to 85 °C
Unit
Min
Typ
Max
VIH
Voltage input high (SEL1,
2)
High level guaranteed
2.4
-
-
V
Voltage input low
VIL
(SEL1, 2)
Low level guaranteed
-0.5
-
0.8
V
Clamp diode voltage
VIK
(SEL1, 2)
VCC = 3.6 V
IIN = -18 mA
-
Input high current
IIH
(SEL1, 2)
VCC = 3.6 V
VIN = VCC
-
Input low current
IIL
(SEL1, 2)
VCC = 3.6 V
VIN = GND
-
VCC = 3.6 V
A to H = VCC
Leakage current through DDC1 to DDC2 = VCC
IOFF(SW)(1)
the switch common
terminals (A to H)
A0 to H0 = 0 V
A1 to H1 = floating
-
(DDC1 to DDC2)
DDCx_0 = 0 V
DDCx1 = floating
SEL1 = VCC, SEL2 = VCC
IOFF(SEL1)
SEL1 pin leakage current VCC = 0 V
SEL1, 2 = 0 to 3.6 V
-
-0.8
-1.2
V
-
±5
µA
-
±5
µA
-
±1
µA
-
±1
µA
RON
RFLAT
ΔRON
Switch ON resistance(2)
VCC = 3.0 V
VIN = 1.5 to VCC
IIN = -40 mA
ON resistance flatness (2)
(3)
VCC = 3.0 V
VIN at 1.5 and VCC
IIN = -40 mA
ON resistance match
between channel
ΔRON = RONMAX-RONMIN
(2)(4)
VCC = 3.0 V
VIN = 1.5 to VCC
IIN = -40 mA
-
4.0
6.5
Ω
-
0.5
-
Ω
-
0.4
1
Ω
1. Refer to Figure 4: Test circuit for leakage current (IOFF) on page 9
2. Measured by voltage drop between channels at indicated current through the switch. ON resistance is determined by the
lower of the voltages.
3. Flatness is defined as the difference between the RONMAX and RONMIN of ON resistance over the specified range.
4. ΔRON measured at same VCC, temperature and voltage level.
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Doc ID 18318 Rev 1
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