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NLX1G11MUTCG Просмотр технического описания (PDF) - ON Semiconductor

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NLX1G11MUTCG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NLX1G11MUTCG Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NLX1G11
DC ELECTRICAL CHARACTERISTICS
VCC
Symbol Parameter
Conditions
(V)
TA = 25 5C
Min
Typ
Max
TA = −555C to +1255C
Min
Max
Unit
VIH
Low−Level
Input
Voltage
1.65
2.3 to 5.5
0.75 x VCC
0.70 x VCC
0.75 x VCC
V
0.70 x VCC
VIL
Low−Level
Input
Voltage
1.65
2.3 − 5.5
0.25 x VCC
0.30 x VCC
0.25 x VCC
V
0.30 x VCC
VOH
High−
Level
Output
Voltage
VIN = VIH or VIL
IOH = −100 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
IOH = −12 mA
IOH = −16 mA
IOH = −24 mA
IOH = −32 mA
1.65 − 5.5
1.65
2.3
2.7
3.0
3.0
4.5
VCC−0.1
1.29
1.9
2.2
2.4
2.3
3.8
VCC
1.52
2.15
2.4
2.8
2.68
4.2
VOL
Low−Level VIN = VIH or VIL 1.65 − 5.5
Output
IOL = 100 mA
Voltage
VIN = VIH or VIL
IOH = 4 mA
1.65
IOH = 8 mA
2.3
IOH = 12 mA
2.7
IOH = 16 mA
3.0
IOH = 24 mA
3.0
IOH = 32 mA
4.5
0.08
0.1
0.12
0.15
0.22
0.22
IIN
Input
0 v VIN v 5.5V 0 to 5.5
Leakage
Current
0.1
0.24
0.3
0.4
0.4
0.55
0.55
±0.1
VCC−0.1
1.29
1.9
2.2
2.4
2.3
3.8
V
0.1
V
0.24
0.3
0.4
0.4
0.55
0.55
±1.0
mA
IOFF
Power−Off VIN or VOUT =
0
Output
5.5 V
Leakage
Current
1.0
10
mA
ICC
Quiescent 0 v VIN v VCC
5.5
Supply
Current
1.0
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 2.5 nS)
VCC
Symbol
Parameter
(V)
Test
Condition
TA = 25 5C
Min Typ Max
TA = −555C to
+1255C
Min Max Unit
tPLH,
tPHL
Propagation Delay,
Input to Output
1.65−1.95 RL = 1 MW, CL = 15 pF
2.0
5.5 18.5 2.0
19
ns
2.3−2.7
RL = 1 MW, CL = 15 pF
0.8
3.0
11
0.8 11.5
3.0−3.6
RL = 1 MW, CL = 15 pF
0.5
2.6
7.5
0.5
8.0
RL = 500 W, CL = 50 pF
1.5
3.0
8.5
1.5
9.0
4.5−5.5
RL = 1 MW, CL = 15 pF
0.5
2.2
5.5
0.5
6.0
RL = 500 W, CL = 50 pF
0.8
2.4
7.0
0.8
7.5
CIN
Input Capacitance
5.5
VIN = 0 V or VCC
4.0
pF
CPD
Power Dissipation
3.3
10 MHz
20
pF
Capacitance (Note 7)
5.5
VIN = 0 V or VCC
26
7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
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