IXTA2N100 Просмотр технического описания (PDF) - IXYS CORPORATION
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IXTA2N100 Datasheet PDF : 4 Pages
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IXTA2N100
IXTP2N100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
7
6
5
4
3
2
1
0
0.3
Fig. 7. Input Admittance
TJ = 125ºC
25ºC
- 40ºC
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4
0.5
0.6
0.7
0.8
0.9
VSD - Volts
10,000
f = 1 MHz
Fig. 11. Capacitance
Fig. 8. Transconductance
6.0
5.5
TJ = - 40ºC
5.0
4.5
4.0
25ºC
3.5
3.0
125ºC
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS = 500V
I D = 1A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
QG - NanoCoulombs
10.00
Fig. 12. Maximum Transient Thermal
Im pedance
1,000
Ciss
1.00
100
Coss
0.10
10
0
Crss
5
10
15
20
25
30
35
40
VDS - Volts
0.01
0.00001 0.0001 0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_2N100(3X-G68)4-16-09
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