IXTA2N100 Просмотр технического описания (PDF) - IXYS CORPORATION
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IXTA2N100 Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 20Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
(TO-220)
Characteristic Values
Min. Typ. Max.
1.5
2.5
S
825
pF
58
pF
15
pF
20
ns
23
ns
34
ns
21
ns
18.0
nC
3.7
nC
8.2
nC
1.25 °C/W
0.50
°C/W
IXTA2N100
IXTP2N100
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = 2A, VGS = 0V, Note 1
trr
IF = 2A, -di/dt = 100A/μs, VR = 100V
Characteristic Values
Min. Typ. Max.
2A
8A
1.5 V
800
ns
TO-263 (IXTA) Outline
Note 1: Pulse Test, t ≤ 300 μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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