TPC8102 Просмотр технического описания (PDF) - Toshiba

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TPC8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut−off current

Drain −source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

IGSS

IDSS

Test Condition

VGS = ±16 V, VDS = 0 V

VDS = −30 V, VGS = 0 V

V (BR) DSS ID = −10 mA, VGS = 0 V

Vth

RDS (ON)

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −3 A

VGS = −10 V, ID = −3 A

VDS = −10 V, ID = −3 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ −24 V, VGS = −10 V, ID = −6 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Drain reverse

current

Pulse (Note 1)

Forward voltage (diode)

Symbol

IDRP

VDSF

Test Condition

—

IDR = −6 A, VGS = 0 V

TPC8102

Min Typ. Max Unit

—

—

±10

µA

—

—

−10

µA

−30

—

—

V

−0.8

— −2.0

V

—

56

70

mΩ

—

34

40

mΩ

4.5

9

—

S

— 1380 —

—

220

—

pF

—

560

—

—

12

—

—

20

—

ns

—

22

—

—

90

—

—

43

—

—

30

—

nC

—

13

—

Min Typ. Max Unit

—

—

−24

A

—

—

1.2

V

3

2002-01-18

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