TPC8102 Просмотр технического описания (PDF) - Toshiba
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TPC8102 Datasheet PDF : 7 Pages
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TPC8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)
TPC8102
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)
High forward transfer admittance : |Yfs| = 9 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
−30
V
−30
V
±20
V
−6
A
−24
2.4
W
1.0
W
47
mJ
−6
A
0.24
mJ
150
°C
−55 to 150
°C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
1
2002-01-18
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