2SB557 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Номер в каталоге

Компоненты Описание

Список матч

2SB557

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A

VBE(on) Base-Emitter On Voltage

IC= -5A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

hFE-2

DC Current Gain

IC= -5A; VCE= -5V

COB

Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

fT

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

 hFE-1 Classifications

R

O

40-80

70-140

2SB557

MIN TYP. MAX UNIT

-120

V

-5

V

-2.5

V

-2.0

V

-0.1 mA

-0.1 mA

40

140

20

280

pF

7

MHz

SPTECH website：www.superic-tech.com

2

Share Link: